By Matjaž Kavčič
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Extra resources for Application of wavelength dispersive X-ray spectroscopy in X-ray trace element analytical techniques
K. -G. (2006). Comparison of microstructure and phase transformation for nanolayered CrN/AlN and TiN/AlN coatings at elevated temperatures in air environment. Thin Solid Films, Vol. 515, No. 3, pp. 1097-1101, ISSN 0040-6090. Yashar, Philip C. & Sproul, William D. (1999). Nanometer scale multilayered hard coatings. Vacuum, Vol. 55, No. 3, pp. 179-190, ISSN 0042-207X. 3 High Resolution X-Ray Spectroscopy with Compound Semiconductor Detectors and Digital Pulse Processing Systems Leonardo Abbene and Gaetano Gerardi Dipartimento di Fisica, Università di Palermo Italy 1.
The fast rising part is due to the electron component, while the slower component is due to the holes. As pointed out in the foregoing discussions, poor carrier transport properties of CdTe and CdZnTe materials are a critical issue in the development of X-ray detectors. e. peak asymmetries and long tails. , 2009). Some techniques concern the particular irradiation configuration of the detectors. Planar parallel field (PPF) is the classical configuration used in overall planar detectors, in which the detectors are irradiated through the cathode electrode, thus minimizing the hole trapping probability.
G. g. CdTe) of the periodic table. g. CdZnTe and CdMnTe. Table 1 reports the physical properties of common compound semiconductors typically used for radiation detection. , 2009; Takahashi & Watanabe, 2001). Due to the high atomic number, the high density and the wide band gap (Table 1), CdTe and CdZnTe detectors ensure high detection efficiency, good room temperature performance and are very attractive for X-ray and gamma ray applications. Figure 1(a) shows the linear attenuation coefficients, calculated by using tabulated interaction cross section values (Boone & Chavez, 1996), for photoelectric absorption and Compton scattering of Si (green line), Ge (blu line) and CdTe (red line); as shown in Figure 1(a), photoelectric absorption is the main process up to about 200 keV for CdTe.
Application of wavelength dispersive X-ray spectroscopy in X-ray trace element analytical techniques by Matjaž Kavčič