A modular IGBT converter system for high frequency induction by Zied H.A. PDF

By Zied H.A.

ISBN-10: 3895740896

ISBN-13: 9783895740893

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F: Implication of Small-Signal Q with Regard to Oscillator Perfbrmance Since it is possible to perform extensive analysis of the diode in the smallsignal regime because of its simplicity, it will be very convenient if the largesignal performance of the diode can be predicted from the small-signal analysis. 26 The Q was defined in (35)as 271 times the ratio of average ac energy stored in the diode to average energy dissipation per cycle. This can be written as where W is ac energy stored in the diode and the angular brackets indicate the time average over one cycle.

Region, the added charge lowers the field in the center and raises it near the ends. This is because more electrons are added near the n-type end and more holes near the p-type end. Therefore, roughly speaking, the differential resistance is likely to be negative when the field profile is upward concave and positive when upward convex. The situation is illustrated in Fig. 8. Actually, the above statement is too crude. The presence of negative resistance has to be determined case by case. Let us consider a special case of constant electric field across the spacecharge region.

This shows up as a sharp change of field near the n-side end. The current distributions shown by dashed lines in Fig. 6a indicate that avalanche multiplication takes place over a region about 1 p wide on the n-type side of the field peak. Since electrons have a larger ionization rate than holes in silicon, the avalanche region is shifted toward the n-type side with respect to the field peak. There, more electrons with the larger ionization rate are present than on the p-type side. The calculated current-voltage characteristics are plotted in Fig.

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A modular IGBT converter system for high frequency induction heating applications by Zied H.A.


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